Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate temperature effect on Schottky diode electrical parameters. Beryllium-doped Al0.29Ga0.71As diodes grown by molecular beam epitaxy (MBE) have used validate suggested method. The proposed approach is based analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, interface state density (Nss) as function difference between surface energy valence band (Ess?EV) was determined. obtained results demonstrate high efficiency strategy accurately determine parameters their dependency. This can be clearly remarked from well fit both predicted measured current